900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Unisonic Technologies

UTT6N10 Datasheet Preview

UTT6N10 Datasheet

6A N-CHANNEL POWER MOSFET

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
UTT6N10
100V, 6A N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC UTT6N10 is an N-channel enhancement mode Power
FET, it uses UTC’s advanced technology to provide customers a
minimum on-state resistance, high switching speed and ultra low
gate charge.
The UTC UTT6N10 is usually used in DC-DC Conversion.
FEATURES
* RDS(on) < 200m@ VGS = 10 V, ID=3A
* High Switching Speed
SYMBOL
D (2)
Power MOSFET
1 SOT-223
G (1)
S (3)
ORDERING INFORMATION
Ordering Number
UTT6N10G-AA3-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOT-223
S: Source
Pin Assignment
123
GDS
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-779.D




Unisonic Technologies

UTT6N10 Datasheet Preview

UTT6N10 Datasheet

6A N-CHANNEL POWER MOSFET

No Preview Available !

UTT6N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
±20 V
Drain Current
Continuous
Pulsed
ID
IDM
6A
24 A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
TA=25°C (Note 1)
EAS
PD
12 mJ
0.8 W
Junction Temperature
Storage Temperature Range
TJ
TSTG
150
-55~+150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 1)
Junction to Case
SYMBOL
θJA
θJC
RATINGS
150
12
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3A
VGS=4.5V, ID=1A
100 V
1 µA
+100 nA
-100 nA
1.0 3.0
145 200
155 225
V
m
m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
700 900
42 60
10 15
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDD=50V, ID=1.3A
IG=100µA
VDD=30V, ID=0.5A, VGS=10V,
RGEN=25
23 nC
36 nC
5 nC
32 ns
28 ns
220 ns
41 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
ssDrain-Source Diode Forward Voltage
VSD IS=3.2A, VGS=0V (Note 2)
0.86 1.3 V
Maximum Body-Diode Continuous Current
IS
6A
Source Current Pulsed
ISM
24 A
Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
2. Pulse Test: Pulse width 300µs, Duty cycle 2%
3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-779.D


Part Number UTT6N10
Description 6A N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
PDF Download

UTT6N10 Datasheet PDF






Similar Datasheet

1 UTT6N10 6A N-CHANNEL POWER MOSFET
Unisonic Technologies
2 UTT6N10Z N-CHANNEL POWER MOSFET
Unisonic Technologies
3 UTT6N10Z N-Channel Power MOSFET
Kexin





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy