Datasheet4U Logo Datasheet4U.com

UTT6N10Z - N-Channel Power MOSFET

Key Features

  • s.
  • RDS(on) 80mΩ @VGS = 10V,ID=6A.
  • High Switching Speed.
  • Low Crss (Typically 3.1pF).
  • Low Gate Charge (Typically 4.3nC) SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 2.Drain 1.Gate 3.Source 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 123 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed D.

📥 Download Datasheet

Full PDF Text Transcription for UTT6N10Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTT6N10Z. For precise diagrams, and layout, please refer to the original PDF.

SMD Type TrManOsSisFtoErTs N-Channel Power MOSFET UTT6N10Z ■ Features ● RDS(on) 80mΩ @VGS = 10V,ID=6A ● High Switching Speed ● Low Crss (Typically 3.1pF) ● Low Gate Charg...

View more extracted text
A ● High Switching Speed ● Low Crss (Typically 3.1pF) ● Low Gate Charge (Typically 4.3nC) SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 2.Drain 1.Gate 3.Source 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 123 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (Note1) Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Unisonic Technologies Logo UTT6N10Z N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies Logo UTT6N10 6A N-CHANNEL POWER MOSFET Unisonic Technologies

More Datasheets from Kexin Semiconductor

Part Number Description