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UTT6N10Z - N-Channel Power MOSFET

Datasheet Summary

Features

  • s.
  • RDS(on) 80mΩ @VGS = 10V,ID=6A.
  • High Switching Speed.
  • Low Crss (Typically 3.1pF).
  • Low Gate Charge (Typically 4.3nC) SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 2.Drain 1.Gate 3.Source 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 123 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed D.

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Datasheet Details

Part number UTT6N10Z
Manufacturer Kexin
File Size 395.88 KB
Description N-Channel Power MOSFET
Datasheet download datasheet UTT6N10Z Datasheet
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    SMD Type TrManOsSisFtoErTs N-Channel Power MOSFET UTT6N10Z ■ Features ● RDS(on) 80mΩ @VGS = 10V,ID=6A ● High Switching Speed ● Low Crss (Typically 3.1pF) ● Low Gate Charge (Typically 4.3nC) SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 2.Drain 1.Gate 3.Source 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 123 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (Note1) Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.
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