UTT6N10Z
Overview
- RDS(on) 80mΩ @VGS = 10V,ID=6A
- High Switching Speed
- Low Crss (Typically 3.1pF)
- Low Gate Charge (Typically 4.3nC) SOT-223
- 50±0.2 3.00±0.1 4 10 Unit:mm
- 0±0.3 3.50±0.2
- 75 (min)
- 80 (max)
- 02 ~ 0.1
- 6 ± 0.1 123
| Part | UTT6N10Z |
|---|---|
| Description | N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Kexin Semiconductor |
| Size | 395.88 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| UTT6N10Z | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| UTT6N10 | Unisonic Technologies | 6A N-CHANNEL POWER MOSFET |