| Part Number | UTT6N10Z Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
TrManOsSisFtoErTs
N-Channel Power MOSFET UTT6N10Z
■ Features
● RDS(on) 80mΩ @VGS = 10V,ID=6A ● High Switching Speed ● Low Crss (Typically 3.1pF) ● Low Gate Charge (Typically 4.3nC)
SOT-22.
* RDS(on) 80mΩ @VGS = 10V,ID=6A * High Switching Speed * Low Crss (Typically 3.1pF) * Low Gate Charge (Typically 4.3nC) SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 2.Drain 1.Gate 3.Source 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 123 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 . |
UTT6N10Z Datasheet and Specifications PDF
The UTT6N10Z is a N-Channel Power MOSFET.
| Part Number | UTT6N10Z Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC UTT6N10Z is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge.
The UT.
* RDS(on) < 108 mΩ @ VGS = 10V, ID=3.0A * High Switching Speed
* SYMBOL 2.Drain 1 TO-252 1 SOT-223 1.Gate 3.Source * ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT6N10ZL-AA3-R UTT6N10ZG-AA3-R UTT6N10ZL-TN3-R UTT6N10ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Sou. |