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CHA3801-FAB Datasheet, United Monolithic Semiconductors

CHA3801-FAB Datasheet, United Monolithic Semiconductors

CHA3801-FAB

datasheet Download (Size : 973.02KB)

CHA3801-FAB Datasheet

CHA3801-FAB amplifier

l-band low noise amplifier.

CHA3801-FAB

datasheet Download (Size : 973.02KB)

CHA3801-FAB Datasheet

CHA3801-FAB Features and benefits

CHA3801-FAB Features and benefits


* L-Band performances: 1-2GHz
* 1.5dB Noise Figure
* 28dB Linear Gain
* 17dBm Saturated Output Power
* 27dBm Output Third Order Intercept
* DC bia.

CHA3801-FAB Application

CHA3801-FAB Application

from space, military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate.

CHA3801-FAB Description

CHA3801-FAB Description

The CHA3801-FAB is an L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included to allow high input power survivability. It is designed for a wide range of applications, from space, military to comm.

Image gallery

CHA3801-FAB Page 1 CHA3801-FAB Page 2 CHA3801-FAB Page 3

TAGS

CHA3801-FAB
L-Band
Low
Noise
Amplifier
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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