CHA3801-FAB Datasheet L-band Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3801-FAB L-Band Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless.

Datasheet Details

Part number	CHA3801-FAB
Manufacturer	United Monolithic Semiconductors
File Size	973.02 KB
Description	L-Band Low Noise Amplifier
Datasheet	CHA3801-FAB-UnitedMonolithicSemiconductors.pdf

The CHA3801-FAB is an L-Band LNA monolithic circuit including an active bias network.

In addition, a protection network is included to allow high input power survivability.

It is designed for a wide range of applications, from space, military to commercial communication systems.

L-Band performances: 1-2GHz.
1.5dB Noise Figure.
28dB Linear Gain.
17dBm Saturated Output Power.
27dBm Output Third Order Intercept.
DC bias: Vd = 5Volt @ 70mA.
6x6mm² hermetic metal ceramic package.
MSL3 ― -40°C . . . +25°C - - - +85°C Typical Noise Figure versus Temperature Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 1 2 GHz.