CHA5266-FAB datasheet, amplifier equivalent, United Monolithic Semiconductors

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CHA5266-FAB Features and benefits

* Broadband performances: 10-16GHz
* 24dB Linear Gain
* 26dBm output power @ 1dB comp.
* 35.5dBm output IP3
* DC bias: Vd = 5.0Volt @Idq = 320mA
*.

CHA5266-FAB Application

from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length.

CHA5266-FAB Description

The CHA5266-FAB is a three stage monolithic GaAs medium power amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It is designed for a wide range of applications, from military to commercial communication systems. The circuit .

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