EC2612-99F phemt equivalent, 40ghz super low noise phemt.
low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in .
The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology. Gate width is 120 µm and the 0.15µm Tshaped aluminium gate features low resistance and excellent reliability. The device shows a very .
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