UF3C065030B3 - MOSFET

UnitedSiC

UF3C065030B3 Datasheet Preview — Preview of UF3C065030B3 PDF

Datasheet Details

Part number	UF3C065030B3
Manufacturer	UnitedSiC
File Size	533.86 KB
Description	MOSFET
Datasheet	UF3C065030B3-UnitedSiC.pdf

UF3C065030B3 Product details

Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Number UF3C065030B3 Package D2PAK-3L Marking UF3C065030B3 Typical.

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Published: Apr 15, 2020 |