UF3C065030B3 Datasheet - UnitedSiC

MOSFET

UF3C065030B3 Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Nu

UF3C065030B3 General Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device o.

UF3C065030B3 Datasheet (533.86 KB)

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UF3C065030B3

Manufacturer:

UnitedSiC

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533.86 KB

Description:

Mosfet.

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UF3C065030B3 Features

UF3C065030B3 General Description

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