UF3C065030B3
UF3C065030B3 is SiC Cascode JFET manufactured by onsemi.
Description
This Si C FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the D2PAK-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive.
Features
- Typical On-resistance RDS(on),typ of 27 m W
- Maximum Operating Temperature of 175°C
- Excellent Reverse Recovery
- Low Gate Charge
- Low Intrinsic Capacitance
- High Pulse Current Capability
- ESD Protected, HBM Class 2
- Very Low Switching Losses (Required RC-snubber Loss Negligible under Typical Operating Conditions)
- This Device is Halogen Free and Ro HS pliant with Exemption
7a, Pb- Free 2LI (on second level interconnection)
Typical Applications
- EV Charging
- PV Inverters
- Switch Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
MARKING DIAGRAM
UF3C065030B3 AYYWW ZZZ
UF3C065030B3 = Specific Device Number
= Assembly Location
= Year
= Work Week
= Lot ID
PIN CONNECTIONS
TAB D (2)
G (1)
S (3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of this data sheet.
© Semiconductor ponents Industries, LLC, 2024
March,...
