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UF3C065030B3 Datasheet MOSFET

Manufacturer: UnitedSiC

Overview: DATASHEET UF3C065030B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-27mW SiC Cascode Rev.

General Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.

These devices are excellent for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive.

Key Features

  • w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Number UF3C065030B3 Package D2PAK-3L Marking UF3C065030B3 Typical.

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