UF3C120080K3S - SiC MOSFET

UnitedSiC

UF3C120080K3S Datasheet Preview — Preview of UF3C120080K3S PDF

Datasheet Details

Part number	UF3C120080K3S
Manufacturer	UnitedSiC
File Size	513.42 KB
Description	SiC MOSFET
Datasheet	UF3C120080K3S-UnitedSiC.pdf

UF3C120080K3S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Typical.

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Published: Apr 15, 2020 |