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UF3C120080K3S Datasheet Sic Cascode JFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices.

Available in the TO247-3 package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive.

Key Features

  • Typical On-resistance RDS(on),typ of 80 mW.
  • Maximum Operating Temperature of 175 C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

UF3C120080K3S from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
UnitedSiC Logo UF3C120080K3S SiC MOSFET UnitedSiC

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