UF3C120080K3S Overview
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices. Available in the TO247-3 package, this device exhibits ultralow gate charge and...
UF3C120080K3S Key Features
- Typical On-resistance RDS(on),typ of 80 mW
- Maximum Operating Temperature of 175 C
- Excellent Reverse Recovery
- Low Gate Charge
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2
- Very Low Switching Losses (required RC-snubber loss negligible
- This Device is Pb-Free, Halogen Free and is RoHS pliant
