UF3C120150K4S - MOSFET

UnitedSiC

UF3C120150K4S Datasheet Preview — Preview of UF3C120150K4S PDF

Datasheet Details

Part number	UF3C120150K4S
Manufacturer	UnitedSiC
File Size	681.56 KB
Description	MOSFET
Datasheet	UF3C120150K4S-UnitedSiC.pdf

UF3C120150K4S Product details

Description

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Published: Apr 15, 2020 |