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UF3C120150K4S Datasheet Sic Cascode JFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V,.

General Description

This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits very fast switching using a 4-terminal TO247-4 package and the best reverse recovery characteristics of any device of similar ratings.

These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Key Features

  • Typical On-resistance RDS(on),typ of 150 mW.
  • Maximum Operating Temperature of 175 °C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • TO-247-4 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

UF3C120150K4S from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
UnitedSiC Logo UF3C120150K4S MOSFET UnitedSiC

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