Datasheet4U Logo Datasheet4U.com

UF3C120150K4S - SiC Cascode JFET

General Description

F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Key Features

  • Typical On-resistance RDS(on),typ of 150 mW.
  • Maximum Operating Temperature of 175 °C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • TO-247-4 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UF3C120150K4S MOSFET UnitedSiC
UF3C120150B7S 1200V SiC Cascode UnitedSiC
UF3C120040K3S MOSFET UnitedSiC
UF3C120040K3S SiC Cascode JFET onsemi
UF3C120040K4S SiC Cascode UnitedSiC

Other Datasheets by onsemi

Part Number Description
UF3C120080K3S SiC Cascode JFET
UF3C170400B7S SiC Cascode JFET
UF3C065030B3 SiC Cascode JFET
UF3C065030K3S SiC Cascode JFET
UF3C065040K3S SiC Cascode JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 150 mohm UF3C120150K4S Description This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO247-4 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.