UF3C120150K4S Datasheet | onsemi

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247‐4, 1200 V, 150 mohm Description This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO247-4 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. Features - Typical On-resistance RDS(on),typ of 150 mW - Maximum Operating Temperature of 175 °C - Excellent Reverse Recovery - Low...