UF3C120150K4S Description
This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO247-4 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application...
UF3C120150K4S Key Features
- Typical On-resistance RDS(on),typ of 150 mW
- Maximum Operating Temperature of 175 °C
- Excellent Reverse Recovery
- Low Gate Charge
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2
- TO-247-4 Package for Faster Switching, Clean Gate Waveforms
- This Device is Pb-Free, Halogen Free and is RoHS pliant