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UF3C120150K4S - MOSFET

General Description

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Key Features

  • w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Datasheet Details

Part number UF3C120150K4S
Manufacturer UnitedSiC
File Size 681.56 KB
Description MOSFET
Datasheet download datasheet UF3C120150K4S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF3C120150K4S CASE CASE D (1) 1 2 34 G (4) KS (3) S (2) Part Number UF3C120150K4S Package TO-247-4L Marking UF3C120150K4S 1200V-150mW SiC Cascode Rev. A, April 2019 Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.