xJ SiC Series | 100mW - 1200V SiC Cascode | UJC1210K
Datasheet
Description
United Silicon Carbide's cascode products co-package its xJ series high-
performance SiC JFETs with a cascode optimized MOSFET to produce the
only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads, and any application requiring
standard gate drive.
CASE
G (1)
CASE
D (2)
123
S (3)
Part Number
UJC1210K
Package
TO-247-3L
Marking
UJC1210K
Features
w Max. on-resistance RDS(on)max of 100mW
w Standard 12V gate drive
w Maximum operating temperature of 150°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w RoHS compliant
Typical Applications
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 1
Pulsed drain current 2
Short-circuit withstand time 3
Single pulsed avalanche energy 3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 Seconds
1 Limited by TJ,max
2 Pulse width tp limited by TJ,max
3 Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
tSC
EAS
Ptot
TJ,max
TJ, TSTG
TL
Test Conditions
DC
TC = 25°C
TC = 100°C
TC = 25°C
VGS=15V, VCC<600V
L=15mH, IAS =2.8A
TC = 25°C
Value
1200
-25 to +25
21.5
14
66.5
4
64
113.6
150
-55 to 150
250
Units
V
V
A
A
A
ms
mJ
W
°C
°C
°C
Rev. B, December 2018
1 For more information go to www.unitedsic.com.
