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UnitedSiC

UJC1210K Datasheet Preview

UJC1210K Datasheet

MOSFET

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xJ SiC Series | 100mW - 1200V SiC Cascode | UJC1210K
Datasheet
Description
United Silicon Carbide's cascode products co-package its xJ series high-
performance SiC JFETs with a cascode optimized MOSFET to produce the
only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads, and any application requiring
standard gate drive.
CASE
G (1)
CASE
D (2)
123
S (3)
Part Number
UJC1210K
Package
TO-247-3L
Marking
UJC1210K
Features
w Max. on-resistance RDS(on)max of 100mW
w Standard 12V gate drive
w Maximum operating temperature of 150°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w RoHS compliant
Typical Applications
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 1
Pulsed drain current 2
Short-circuit withstand time 3
Single pulsed avalanche energy 3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 Seconds
1 Limited by TJ,max
2 Pulse width tp limited by TJ,max
3 Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
tSC
EAS
Ptot
TJ,max
TJ, TSTG
TL
Test Conditions
DC
TC = 25°C
TC = 100°C
TC = 25°C
VGS=15V, VCC<600V
L=15mH, IAS =2.8A
TC = 25°C
Value
1200
-25 to +25
21.5
14
66.5
4
64
113.6
150
-55 to 150
250
Units
V
V
A
A
A
ms
mJ
W
°C
°C
°C
Rev. B, December 2018
1 For more information go to www.unitedsic.com.




UnitedSiC

UJC1210K Datasheet Preview

UJC1210K Datasheet

MOSFET

No Preview Available !

xJ SiC Series | 100mW - 1200V SiC Cascode | UJC1210K
Datasheet
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Total drain leakage current
Total gate leakage current
Drain-source on-resistance
Gate threshold voltage
Gate resistance
Symbol
BVDS
IDSS
IGSS
RDS(on)
VG(th)
RG
Test Conditions
VGS=0V, ID=1mA
VDS = 1200V,
VGS = 0V, TJ = 25°C
VDS = 1200V,
VGS = 0V, TJ = 150°C
VDS=0V, Tj=25°C,
VGS = -20V / +20V
VGS=12V, ID=10A,
TJ = 25°C
VGS=12V, ID=10A,
TJ = 150°C
VDS = 5V, ID = 10mA
f = 1MHz, open drain
Min
1200
4.5
Value
Typ
70
150
5
70
161
5
1.1
Max
500
100
100
5.5
Units
V
mA
nA
mW
V
W
Typical Performance - Reverse Diode
Parameter
Diode continuous forward current 1
Diode pulse current 2
Forward voltage
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Symbol
IS
IS,pulse
VFSD
Test Conditions
TC = 25°C
TC = 25°C
VGS = 0V, IF =10A,
TJ = 25°C
VGS = 0V, IF = 10A,
TJ =150°C
Value
Min Typ Max
21.5
66.5
1.4 2
2
Qrr VR=800V, IF=14A,
VGS =0V,RG_EXT = 22W
di/dt=1550A/ms,
trr TJ = 25°C
112
34
Qrr VR=800V, IF=14A,
VGS =0V,RG_EXT = 22W
di/dt=1550A/ms,
trr TJ = 150°C
127
36
Units
A
A
V
nC
ns
nC
ns
Rev. B, December 2018
2 For more information go to www.unitedsic.com.


Part Number UJC1210K
Description MOSFET
Maker UnitedSiC
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