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MIR-3305 - SUBMINIATURE PHOTOINTERRUPTER

Description

The MIR-3305 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing.

It is a reflective subminiature photointerrupter.

Features

  • Compact and thin MIR-3305 : Compact DIP, long lead type Optimum detecting distance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type NOTE : (1). Tolerance:±0.2mm (2). ( ) Reference dimensions Emitter D TOP VIEW C Col lector B Cathode Anode A Absolute Maximum Ratings @ TA=25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation O.

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Datasheet Details

Part number MIR-3305
Manufacturer Unity Opto Technology
File Size 180.02 KB
Description SUBMINIATURE PHOTOINTERRUPTER
Datasheet download datasheet MIR-3305 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUBMINIATURE PHOTOINTERRUPTER Description The MIR-3305 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter. D C MIR-3305 Package Dimensions Unit: mm A www.DataSheet4U.com B Anode Mark Features Compact and thin MIR-3305 : Compact DIP, long lead type Optimum detecting distance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type NOTE : (1).Tolerance:±0.2mm (2).
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