Datasheet Details
| Part number | UM8810 |
|---|---|
| Manufacturer | UniverChipSemi |
| File Size | 945.20 KB |
| Description | 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET |
| Datasheet | UM8810-UniverChipSemi.pdf |
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Overview: UM8810 20V mon-Drain Dual N-Channel Enhancement Mode MOSFET .
| Part number | UM8810 |
|---|---|
| Manufacturer | UniverChipSemi |
| File Size | 945.20 KB |
| Description | 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET |
| Datasheet | UM8810-UniverChipSemi.pdf |
|
|
|
The UM8810 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| UM8814 | 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET |
| UM8820 | 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET |
| UM8822 | 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET |