FQD50N06 Overview
FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50.
FQD50N06 Key Features
- 175 °C Junction Temperature
- TrenchFET® Power MOSFET
- Material categorization
Datasheet Details
| Part number | FQD50N06 |
|---|---|
| Datasheet | FQD50N06-VBsemi.pdf |
| File Size | 861.99 KB |
| Manufacturer | VBsemi |
| Description | N-Channel MOSFET |
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