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IRFZ44NSPBF-VB
IRFZ44NSPBF-VB Datasheet
N-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration
60
V
11
mΩ
12
mΩ
75
A
Single
D2PAK (TO-263)
FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET
D
G D S
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
75 50a
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.
IRFZ44NSPBF Datasheet
