Datasheet4U Logo Datasheet4U.com

IRFZ44ESPBF - Power MOSFET

Download the IRFZ44ESPBF datasheet PDF. This datasheet also covers the IRFZ44ELPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • W 02, 2000 IN T HE AS S EMB LY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L ASS EMBLY LOT CODE OR INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY LOT CODE PART NUMBE R F 530S DAT E CODE P = DES IGNAT ES LE AD-F REE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ44ELPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ44ES N-Channel MOSFET INCHANGE
IRFZ44E N-Channel MOSFET INCHANGE
IRFZ44 Power MOSFET Fairchild
IRFZ44 Power MOSFET Vishay
IRFZ44 N-Channel Trench Power MOSFET Thinki Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ44ES Power MOSFET
IRFZ44E Power MOSFET
IRFZ44EL Power MOSFET
IRFZ44ELPBF Power MOSFET
IRFZ44EPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95572 IRFZ44ESPbF IRFZ44ELPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.023Ω G ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.