Inchange Semiconductor IRFZ44CN
N-Channel MOSFET Transistor
FEATURES
●Drain Current –ID=49A@ TC=25℃●Drain Source Voltage: VDSS= 55V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max)
●Fast Switching
DESCRIPTION
●Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 55 ±20 49 160 94 175 -55~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.5 62 UNIT ℃/W ℃/W isc Website: INCHANGE Semico...