IRFZ46NSPbF Description
l l IRFZ46NSPbF IRFZ46NLPbF HEXFET® Power MOSFET D PD - 95158 VDSS = 55V RDS(on) = 0.0165Ω G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely...
IRFZ46NSPbF Key Features
- Low-profile through-hole (IRFZ46NL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated