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IRFZ46NL - POWER MOSFET

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ46N N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ46NLPbF HEXFET Power MOSFET
IRFZ46N Power MOSFET
IRFZ46NPbF Power MOSFETs
IRFZ46NS POWER MOSFET
IRFZ46NSPbF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D IRFZ46NS IRFZ46NL VDSS = 55V RDS(on) = 0.0165Ω G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.