Datasheet Details
| Part number | IRFZ46N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 106.04 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFZ46N Datasheet
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General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- 2 - DRAIN 3 - SOURCE 4 - DRAIN 3X 1.40 1.15 (.055) (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) NOTES: 2X 1.