IRFZ46NS Description
l HEXFET® Power MOSFET D IRFZ46NS IRFZ46NL VDSS = 55V RDS(on) = 0.0165Ω G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable...
IRFZ46NS Key Features
- Surface Mount (IRFZ46NS)
- Low-profile through-hole (IRFZ46NL)
- 175°C Operating Temperature
- Fast Switching