IRFZ46NLPbF - HEXFET Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRFZ46NLPbF
Manufacturer	International Rectifier
File Size	704.31 KB
Description	HEXFET Power MOSFET
Datasheet	IRFZ46NLPbF Datasheet
Additional preview pages of the IRFZ46NLPbF datasheet.

Product details

Description

l l IRFZ46NSPbF IRFZ46NLPbF HEXFET® Power MOSFET D PD - 95158 VDSS = 55V RDS(on) = 0.0165Ω G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D

Features

VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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Other Datasheets by International Rectifier

IRFZ46NL - POWER MOSFET
IRFZ46N - Power MOSFET
IRFZ46NPbF - Power MOSFETs
IRFZ46NS - POWER MOSFET
IRFZ46NSPbF - HEXFET Power MOSFET
IRFZ46 - Power MOSFET

Published: Jun 8, 2007 |