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IRFZ40 - N-Channel MOSFET Transistor

General Description

purpose applications.

Key Features

  • Typical RDS(on) = 0.022.
  • Avalanche Rugged Technology.
  • 100% Avalanche Tested.
  • Low Gate Charge.
  • High Current Capability.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ40 FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Current Capability DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 50 V ±20 V 50 A 200 A 150 W 175 ℃ -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.0 62.