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T SGS-THOMSON ^ 7 #« [^DWi[L[i(gTOR!]D(gi
IRFZ40 IRFZ42
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRFZ40 IRFZ42
V Dss 50 V 50 V
^DS(on) 0.028 fi 0.035 n
•d 35 A 35 A
• VERY LOW Rds (on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO
INDUSTRIAL APPLICATIONS: • AUTOMOTIVE POWER ACTUATORS • MOTOR CONTROLS • INVERTERS
N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch ing times make these POWER MOS transistors ideal for high speed switching circuits applications such as power actuators driving, motor drive includ ing brushless motor, hydraulic actuators and many other in automotive and automatic guided vehicle applications.