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IRFZ40 - N-Channel Power MOS Transistors

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T SGS-THOMSON ^ 7 #« [^DWi[L[i(gTOR!]D(gi IRFZ40 IRFZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ42 V Dss 50 V 50 V ^DS(on) 0.028 fi 0.035 n •d 35 A 35 A • VERY LOW Rds (on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO INDUSTRIAL APPLICATIONS: • AUTOMOTIVE POWER ACTUATORS • MOTOR CONTROLS • INVERTERS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch­ ing times make these POWER MOS transistors ideal for high speed switching circuits applications such as power actuators driving, motor drive includ­ ing brushless motor, hydraulic actuators and many other in automotive and automatic guided vehicle applications.