Datasheet4U Logo Datasheet4U.com

IRFZ40FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Download the IRFZ40FI datasheet PDF. This datasheet also covers the IRFZ40 variant, as both devices belong to the same n-channel enhancement mode power mos transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ40_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ40FI N-Channel MOSFET Transistor Inchange Semiconductor
IRFZ40 N-Channel MOSFET Transistor Inchange Semiconductor
IRFZ40 N-Channel Power MOSFETS Samsung Electronics
IRFZ40 Power Field Effect Transistors Motorola Semiconductor
IRFZ40 Power MOSFET Vishay

Other Datasheets by STMicroelectronics

Part Number Description
IRFZ40 N-Channel Power MOS Transistors
IRFZ20 N-Channel MOSFET
IRFZ22 N-Channel MOSFET
IRF450 N-Channel MOSFET
IRF451 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI VDSS 50 V 50 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A s TYPICAL RDS(on) = 0.022 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 3 2 1 TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (cont.