STMicroelectronics IRFZ40FI
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
| Part No. | IRFZ40FI |
|---|---|
| Datasheet | IRFZ40FI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 3 2 1 TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (cont.) at Tc = 25 oC ID Drain Current (cont.) at Tc = 100 oC IDM(●) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area July 1993 Value IRFZ40 IRFZ40FI 50 50 50 50 ± 20 50 27 35 19 200 200 150 45 1 0.3 2000 -65 to 175 175 Unit V V V A A A W W/oC V oC oC 1/9 IRFZ40/FI THERMAL DATA Rthj-case Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1 ISOWATT220 3.
