| Part Number | IRFZ40 datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
IRFZ40 Datasheet PDF
The IRFZ40 is a Power Field Effect Transistors.
| Part Number | IRFZ40 datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
.
*Typical RDS(on) = 0.022 *Avalanche Rugged Technology *100% Avalanche Tested *Low Gate Charge *High Current Capability DESCRIPTION *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS G. |
| Part Number | IRFZ40 datasheet |
|---|---|
| Description | N-Channel Power MOSFETS |
| Manufacturer | Samsung Electronics |
| Overview | . . |
| Part Number | IRFZ40 datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is.
* Dynamic dV/dt rating * 175 °C operating temperature Available * Fast switching Available * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts tha. |