IRFZ42
FEATURES
Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
TO-220
IRFZ44/IRFZ45 IRFZ40/IRFZ42
PRODUCT SUMMARY
Part Number VDS
IRFZ44
60V
RDS(on) 0.028Ω
ID 35A
IRFZ45
60V
0.035Ω
35A
IRFZ40
50V
0.028Ω
35A
50V
0.035Ω
35A
- Current limited by wire & pin diameter
MAXIMUM RATINGS
Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1 0MΩ) (1) Gate-Source Voltage Continuous Drain Current Tc=25- Continuous Drain Current Tc=100- Drain Current
- Pulsed (3) Gate Current
- Pulsed Single Pulsed Avalanche Energy (4) Avalanche Current Total Power Dissipation at Tc=25-
Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5 seconds Notes: (1) TJ=25- to 175-
Symbol VDSS VDGR VGS ID ID IDM IGM EAS IAS PD
TJ,Tstg
IRFZ44...
