Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
IRFZ44Z IRFZ44ZS IRFZ44ZL
VDSS = 55V.
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PD - 94797 AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repe...
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e Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRFZ44Z IRFZ44ZS IRFZ44ZL VDSS = 55V Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wid
IRFZ44Z Datasheet
