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VBE165R02S VBsemi

VBE165R02S N-Channel MOSFET

VBE165R02S Avg. rating / M : star-12

datasheet Download

VBE165R02S Datasheet

Features and benefits


• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low T.

Image gallery

VBE165R02S VBE165R02S VBE165R02S

TAGS
VBE165R02S
N-Channel
MOSFET
VBE1606
VBE1615B
VBE1638
VBsemi
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