logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

VBFB165R02S VBsemi

VBFB165R02S N-Channel MOSFET

VBFB165R02S Avg. rating / M : star-14

datasheet Download

VBFB165R02S Datasheet

Features and benefits


• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low T.

Image gallery

VBFB165R02S VBFB165R02S VBFB165R02S

TAGS
VBFB165R02S
N-Channel
MOSFET
VBFB16R02S
VBFB16R07S
VBFB1104N
VBsemi
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy