* TrenchFET® power MOSFET
* 100 % Rg and UIS tested www.VBsemi.com D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage
VBG3638
VBsemi
643.91 KB
Dual n-channel mosfet.
VBG3638 Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration .
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