* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* PWM Optimized for Fast Switching
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-
VBL1206N Datasheet (215.26 KB)
VBL1206N
VBsemi
215.26 KB
N-channel mosfet.
VBL1206N N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.050 at VGS = 10 V 0.060 at VGS = 6.5 V .
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