VBM1104S VBsemi

• Super Trench technology Power MOSFET
• Excellent gate charge x Rds (on) product(FOM)
• Very low on-resfistance Rds (on)
• 100 % Rg and UIS Tested APPLIC.

• Isolated DC/DC Converters D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless oth.