logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

VBM16R02S VBsemi

VBM16R02S N-Channel MOSFET

VBM16R02S Avg. rating / M : star-14

datasheet Download

VBM16R02S Datasheet

Features and benefits


• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low T.

Image gallery

VBM16R02S VBM16R02S VBM16R02S

TAGS
VBM16R02S
N-Channel
MOSFET
VBM16R07S
VBM16R08
VBM16R12
VBsemi
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy