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VBMB165R02S VBsemi

VBMB165R02S N-Channel MOSFET

VBMB165R02S Avg. rating / M : star-12

datasheet Download

VBMB165R02S Datasheet

Features and benefits


• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low T.

Image gallery

VBMB165R02S VBMB165R02S VBMB165R02S

TAGS
VBMB165R02S
N-Channel
MOSFET
VBMB165R02
VBMB165R22
VBMB1606
VBsemi
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