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VPT

2N3740 Datasheet Preview

2N3740 Datasheet

PNP Power Silicon Transistor

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2N3740 & 2N3741
PNP Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV, JANS and JANSR per
MIL-PRF-19500/441
Radiation Tolerant Levels M, D, P, L and R
TO-66 Package
Designed for Power Amplifier and Medium Speed Switching
Applications
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Voltage
Dynamic Characteristics
Small-Signal Short-Circuit Forward Current
Transfer Ratio
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
Switching Characteristics
Turn-On Time
Turn-Off Time
Test Conditions
Symbol Units
IC = -100 mA dc, 2N3740
IC = -100 mA dc, 2N3741
VCE = -40 V dc, 2N3740
VCE = -60 V dc, 2N3741
VCE = -60 V dc, VBE = 1.5 V dc, 2N3740
VCE = -80 V dc, VBE = 1.5 V dc, 2N3741
VCE = -60 V dc, 2N3740
VCE = -80 V dc, 2N3741
VEB = -7 V dc
V(BR)CEO V dc
ICEO µA dc
ICEX nA dc
ICBO nA dc
IEBO nA dc
IC = -100 mA dc, VCE = -1 V dc
IC = -250 mA dc, VCE = -1 V dc
IC = -500 mA dc, VCE = -1 V dc
IC = -1 A dc, VCE = -1 V dc
IC = -4 A dc, VCE = -5 V dc
IC = -250 mA dc, IB = -25 mA dc
IC = -1 A dc, IB = -125 mA dc
IC = -250 mA dc, VCE = -1 Vdc
hFE -
VCE(SAT)1
VCE(SAT)2
V dc
VBE V dc
IC = -100 mA dc; VCE = -10 V dc; f = 5
MHz
| hFE |
IC = -50 mA dc; VCE = -10 V dc; f = 1 kHz
VCB = -10 V dc; IE = 0; 100 kHz ≤ f ≤ 1
MHz
hFE
Cobo
-
-
pF
IC = -1 A dc;
IB1 = -0.1 A dc
IC = -1 A dc;
IB1 = IB2 = -0.1 A dc
ton ns
toff µs
Min.
-60
-80
40
30
20
10
3
1
25
Rev. V4
Max.
-10
-300
-100
-100
120
-0.4
-0.6
-1.0
12
250
100
400
1
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com




VPT

2N3740 Datasheet Preview

2N3740 Datasheet

PNP Power Silicon Transistor

No Preview Available !

2N3740 & 2N3741
PNP Power Silicon Transistor
Rev. V4
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Collector - Emitter Cutoff Current
Test Conditions
TA = +150oC
VCE = -60 V dc, 2N3740
VCE = -80 V dc, 2N3741
Symbol Units
ICEX2 µA dc
Forward Current Transfer Ratio
Safe Operating Area
TA = -55oC
VCE = -1 V dc; IC = -250 mA dc
hFE6
DC Tests:
TC = +25°C, I Cycle, t = 1.0 s
Test 1:
Test 2:
Test 3:
VCE = -6.25 V dc, IC = -4.0 A dc
VCE = -20 Vdc, IC = -1.25 A dc
VCE = -50 Vdc, IC = -150 A dc, 2N3740
VCE = -65 Vdc, IC = -150 A dc, 2N3741
Min.
10
Max.
-25
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Part Number 2N3740
Description PNP Power Silicon Transistor
Maker VPT
Total Page 5 Pages
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