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VG2618160CJ - CMOS DRAM

General Description

The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits.

It is fabrionly or 3.3V only power supply.

Key Features

  • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply.
  • High speed tRAC access time : 50/60 ns.
  • Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
  • Fast Page Mode access.
  • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 1024 refresh cycles in 16 ms (Std) or 128ms (S - version).
  • 4 refresh mode :.

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Datasheet Details

Part number VG2618160CJ
Manufacturer Vanguard Microelectronics Limited
File Size 485.78 KB
Description CMOS DRAM
Datasheet download datasheet VG2618160CJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com VIS Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabrionly or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)18160CJ 1,048,576 x 16 - Bit CMOS Dynamic RAM cated with an advanced submicron CMOS technology and designed to operate from a single 5V backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 42 - pin plastic SOJ. Features • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.