• Part: VS3622DS
  • Description: Dual N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 630.35 KB
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Datasheet Summary

Features - Dual N-Channel,5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - High Effective - Pb-free lead plating; RoHS pliant - VS3622DS 30V/12A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 10 14 12 SOP8 V mΩ mΩ A Part ID VS3622DS Package Type SOP8 Marking 3622DS Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power...