VS3640DB - N-Channel Advanced Power MOSFET

Features

Dual N-Channel.
High Current Capability.
Low on-resistance RDS(on) @ VGS=4.5 V.
Low Gate Charge.
Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source.

Vanguard Semiconductor

Datasheet Details

Part number	VS3640DB
Manufacturer	Vanguard Semiconductor
File Size	767.71 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VS3640DB Datasheet

📁 Similar Datasheet

VS3640DS - N-Channel 30V MOSFET (VBsemi)
VS3647DB - 30V Dual Asymmetric N-Channel Advanced Power MOSFET (Vergiga)
VS3606AP - N-Channel 30V MOSFET (VBsemi)
VS3610AE - N-Channel 30V MOSFET (VBsemi)
VS3614GE - 30V/31A N-Channel Advanced Power MOSFET (Vergiga)
VS3622AD - N-Channel 30V MOSFET (VBsemi)
VS3622DP - Dual N-Channel 30V MOSFET (VBsemi)
VS3698AE - N-Channel MOSFET (VBsemi)
VS3 - AC-DC / Configurable (Emerson)
VS3000 - Transmitter/Receiver (Valens)

Other Datasheets by Vanguard Semiconductor

VS3640DE - Dual N-Channel Advanced Power MOSFET
VS3640DP - Dual N-Channel Advanced Power MOSFET
VS3640DS - Dual N-Channel Advanced Power MOSFET
VS3640AC - N-Channel Advanced Power MOSFET
VS3640AD - N-Channel Advanced Power MOSFET
VS3640AE - N-Channel Advanced Power MOSFET
VS3640AS - N-Channel Advanced Power MOSFET
VS3640BC - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

Features  Dual N-Channel  High Current Capability  Low on-resistance RDS(on) @ VGS=4.5 V  Low Gate Charge  Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.

Published: Aug 19, 2018 |