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VS3640DS-VB
VS3640DS-VB Datasheet N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.009 at VGS = 10 V
0.011 at VGS = 4.5 V
ID (A)a 13 12.5
Qg (Typ.) 6.5nC
FEATURES
• Halogen-free
• Trench Power MOSFET • Optimized for High-Side Synchronous
Rectifier Operation • 100 % Rg Tested • 100 % UIS Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
APPLICATIONS • Notebook CPU Core
- High-Side Switch
D
G
Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
VGS
± 20
V
TC = 25 °C
13
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
12 12b, c
Pulsed Drain Current
TA = 70 °C IDM
10.
VS3640DS Datasheet
