VS3640DB Datasheet | Vanguard Semiconductor

Features - Dual N-Channel - High Current Capability - Low on-resistance RDS(on) @ VGS=4.5 V - Low Gate Charge - Pb-free lead plating; RoHS pliant 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V ① IDM Pulse drain current tested ② IDSM Continuous drain current @VGS=10V PD Maximum power...