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VS3640DB - N-Channel Advanced Power MOSFET

Key Features

  • Dual N-Channel.
  • High Current Capability.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • Low Gate Charge.
  • Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source.

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Datasheet Details

Part number VS3640DB
Manufacturer Vanguard Semiconductor
File Size 767.71 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3640DB Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Dual N-Channel  High Current Capability  Low on-resistance RDS(on) @ VGS=4.5 V  Low Gate Charge  Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.