VS3640DP Datasheet | Vanguard Semiconductor

Features - Dual N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant - VS3640DP 30V/30A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 30 A PDFN5x6 Part ID VS3640DP Package Type PDFN5x6 Marking 3640DP Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TC =25°C TSTG Storage temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance Junction-to-Case RJA Thermal Resistance Junction-to-Ambient Rating...