VS5812AI Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Technology - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 9.5 mΩ 13.5 mΩ 40 A TO-251 Part ID VS5812AI Package Type TO-251 Marking 5812AI Tape and reel information 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD...