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VS5812AE - N-Channel Advanced Power MOSFET

Features

  • N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VS5812AE 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 10 mΩ 14.5 mΩ 40 A PDFN3333 Part ID VS5812AE Package Type PDFN3333 Marking 5812AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specifie.

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Datasheet Details

Part number VS5812AE
Manufacturer Vanguard Semiconductor
File Size 376.06 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS5812AE Datasheet

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Full PDF Text Transcription

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS5812AE 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 10 mΩ 14.
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