VS5812AE Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 10 mΩ 14.5 mΩ 40 A PDFN3333 Part ID VS5812AE Package Type PDFN3333 Marking 5812AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① Avalanche energy, single pulsed ② PD...