Vanguard Semiconductor VS5812AI
N-Channel Advanced Power MOSFET
| Part No. | VS5812AI |
|---|---|
| Datasheet | VS5812AI Download |
| Manufacturer |  Vanguard Semiconductor |
| Description | N-Channel Advanced Power MOSFET |
| Buy | Stock & Price |
FEATURES
● N-Channel，5V Logic Level Control● Enhancement mode
● Very low on-resistance RDS(on) @ VGS=4.5 V
● VitoMOS® Technology
● 100% Avalanche Tested
● Pb-free lead plating; RoHS compliant VS5812AI 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 9.5 mΩ 13.5 mΩ 40 A TO-251 Part ID VS5812AI Package Type TO-251 Marking 5812AI Tape and reel information 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°
