• Part: VS6018BTD
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 630.69 KB
Download VS6018BTD Datasheet PDF
VS6018BTD page 2
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Datasheet Summary

Features - N-Channel,5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5V - 100% Avalanche test - Pb-free lead plating; RoHS pliant 65V/95A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10V R @ DS(on),TYP VGS=4.5V ID 6.3 mΩ 7.6 mΩ TO-263 Part ID VS6018BTD Package Type TO-263 Marking 6018BTD Tape and reel information 1000PCS/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS PDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain...